DatasheetsPDF.com

FDT86244

Part Number	FDT86244
Manufacturer	ON Semiconductor
Description	N-Channel MOSFET
Published	Dec 25, 2023
Detailed Description	MOSFET – N-Channel Shielded Gate POWERTRENCH) 150 V, 2.8 A, 128 mW FDT86244 Description This N−Channel MOSFET is produc...
Datasheet	FDT86244 PDF File

Overview

MOSFET – N-Channel Shielded Gate POWERTRENCH) 150 V, 2.
8 A, 128 mW FDT86244 Description This N−Channel MOSFET is produced using Fairchild onsemi advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for RDS(on), switching performance and ruggedness.
Features • Shielded Gate MOSFET Technology • Max RDS(on) = 128 mW at VGS = 10 V, ID = 2.
8 A • Max RDS(on) = 178 mW at VGS = 6 V, ID = 2.
4 A • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability in a Widely Used Surface Mount Package • Fast Switching Speed • 100% UIL Tested • These Devices are Pb−Free and are RoHS Compliant Typical Applicatio...

Similar Datasheet

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)