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FDT86244

Fairchild Semiconductor
Part Number FDT86244
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDT86244 N-Channel Shielded Gate PowerTrench® MOSFET January 2016 FDT86244 N-Channel Shielded Gate PowerTrench® MOSFET...
Datasheet PDF File FDT86244 PDF File

FDT86244
FDT86244

Overview
FDT86244 N-Channel Shielded Gate PowerTrench® MOSFET January 2016 FDT86244 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 2.
8 A, 128 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 128 mΩ at VGS = 10 V, ID = 2.
8 A „ Max rDS(on) = 178 mΩ at VGS = 6 V, ID = 2.
4 A „ High Performance Trench Technology for Extremely Low rDS(on) „ High Power and Current Handling Capability in a Widely Used Surface Mount Package „ Fast Switching Speed „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for rDS(on), switching performance and ruggedness.
Applications „ Load Switch „ Primary Switch D SOT-223 S D G D GDS MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuo...


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