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G3407

GTM

P-CHANNEL ENHANCEMENT MODE POWER MOSFET


Description
www.DataSheet4U.com Pb Free Plating Product CORPORATION G3407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2007/01/15 REVISED DATE : BVDSS RDS(ON) ID -30V 52m -4.1A Description The G3407 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM application...



GTM

G3407

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