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GT80J101A

Part Number	GT80J101A
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel IGBT
Published	Sep 3, 2014
Detailed Description	GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications ...
Datasheet	GT80J101A PDF File

Overview

GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications Unit: mm Enhancement-Mode High Speed: tf = 0.
40 µs (max) (IC = 80 A) Low Saturation Voltage: VCE (sat) = 3.
0 V (max) (IC = 80 A) · · · Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Symbol VCES VGES IC ICP PC Tj Tstg ¾ Rating 600 ±20 80 160 200 150 -55~150 0.
8 Unit V V A W °C °C N·m Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature Screw torque JEDEC JEITA TOSHIBA ― ― 2-21F2C Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off ...

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