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GT80J101B

Toshiba Semiconductor
Part Number GT80J101B
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Sep 3, 2014
Detailed Description GT80J101B TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101B High Power Switching Applications ...
Datasheet PDF File GT80J101B PDF File

GT80J101B
GT80J101B

Overview
GT80J101B TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101B High Power Switching Applications • • • Enhancement mode type High speed: tf = 0.
40 µs (max) (I C = 80 A) Low saturation voltage: V CE (sat) = 2.
9 V (max) (I C = 80 A) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current @Tc = 100°C @Tc = 25°C Symbol VCES VGES IC ICP Rating 600 ± 20 33 80 160 80 PC 200 3.
5 Tj Tstg  150 − 55~150 0.
8 °C °C N·m W A Unit V V A Pulsed collector current (Note 1) @Tc = 100°C Collector power dissipation Junction temperature Storage temperature Screw torque @Tc = 25°C @Ta = 25°C JEDEC JEITA TOSHIBA ? ? 2-21F2C Weight: 9.
75 g (typ.
) Note 1: The Maximum rating of ICP=160A is limited by pulse (1ms).
Refer to the graph of safe operating area for the detail.
Thermal Characteristics Characteristics Thermal resistance , junction to case Symbol Rating Unit (Tc = 25°C) Thermal resistance , junction to air Rth (j-c) 0.
625 °C/W (Ta = 25°C) Rth (j-a) 35.
7 °C/W MARKING Part No.
(or abbreviation code) TOSHIBA 80J101B Lot No.
JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish.
1 2006-06-05 GT80J101B Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time tf (Note 2) toff  0.
7 Symbol IGES ICES VGE (OFF) VCE (sat) (1) VCE (sat) (2) Cies tr ton Test Condition VGE = ± 25 V, VCE = 0 VCE = 600 V, VGE = 0 VCE = 5 V, IC = 80 mA IC = 10 A, VGE = 15 V IC = 80 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Resistive load VCC = 300 V, I C = 80 A VGG = ± 15 V, RG = 33Ω Min   3.
0    Typ.
    2.
4 5500 0.
3 0.
5 0.
25 Max ± 500 1.
0 6.
0 2.
0 2.
9   pF Unit nA mA V V     0.
40 µs  Note 2: Switching time measurement circuit and input/output waveforms.
VGE 90% 0 RG RL 0 V...


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