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HFD2N60U
N-Channel MOSFET
Description
HFD2N60U_HFU2N60U HFD2N60U / HFU2N60U 600V N-Channel
MOSFET
FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4 ȍ 7\S #9GS=10V 100% Avalan...
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