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HFD2N60S

SemiHow
Part Number HFD2N60S
Manufacturer SemiHow
Description 600V N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFD2N60S_HFU2N60S March 2014 HFD2N60S / HFU2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1.9 A ...
Datasheet PDF File HFD2N60S PDF File

HFD2N60S
HFD2N60S

Overview
HFD2N60S_HFU2N60S March 2014 HFD2N60S / HFU2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1.
9 A FEATURES ƒ Originative New Design ƒ Superior Avalanche Rugged Technology ƒ Robust Gate Oxide Technology ƒ Very Low Intrinsic Capacitances ƒ Excellent Switching Characteristics ƒ Unrivalled Gate Charge : 6.
0 nC (Typ.
) ƒ Extended Safe Operating Area ƒ Lower RDS(ON) ȍ 7\S #9GS=10V ƒ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N60S 1 2 3 HFU2N60S 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ഒ) – Continuous (TC = 100ഒ͚͑ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 1.
9 1.
14 7.
6 ρ30 120 1.
9 4.
4 4.
5 PD TJ, TSTG TL Power Dissipat...


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