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HFP630A
200V N-Channel MOSFET
Description
HFP630A Jan 2016 HFP630A 200V N-Channel
MOSFET
FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 12 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Teste...
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