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HFP630

SemiHow
Part Number HFP630
Manufacturer SemiHow
Description 200V N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFP630 July 2005 HFP630 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.34 ȍ ID = 9 A FEATURES ‰ Originative New...
Datasheet PDF File HFP630 PDF File

HFP630
HFP630

Overview
HFP630 July 2005 HFP630 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.
34 ȍ ID = 9 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 22 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.
34 ȍ (Typ.
) @VGS=10V ‰ 100% Avalanche Tested TO-220 1 23 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚ – Continuous (TC = 100ఁ͚ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 200 9.
0 5.
7 36 ρͤ͡ 160 9.
0 7.
2 5.
5 PD TJ, TSTG TL Power Dissipation (TC = 25ఁ͚ ͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 72 0.
57 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W/ఁ ఁ ఁ Thermal Resistance Characteristics Symbol RșJC RșCS RșJA Junction-to-Case Parameter Case-to-Sink Junction-to-Ambient Typ.
-0.
5 -- Max.
1.
74 -62.
5 Units ఁ͠Έ క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͡͡ HFP630 Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 4.
5 A 2.
0 -- Off Characteristics BVDSS ԩBVDSS /ԩTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 Ꮃ ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ VDS = 200 V, VGS = 0 V VDS = 160 V, TC = 125ఁ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 200 ----- -- Dyna...


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