N-Channel Enhancement Mode Power MOSFET
Description
+0
N-Channel 40V(D-S) MOSFET
GENERAL DESCRIPTION
The HM2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
FEATURES
● RDS(ON) ≦40mΩ@VGS=10V ● RDS(ON) ≦65...
Similar Datasheet
