● VDS =80V,ID =12.5A RDS(ON) < 16mΩ @ VGS=10V (Typ:13mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capabili...
HM4444 PDF File
