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HM879 TRANSISTOR Datasheet PDF


TYPE TRANSISTOR


Part Number HM879
Description SILICON NPN EPITAXIAL TYPE TRANSISTOR
Feature HI-SINCERITY MICROELECTRONICS CORP. HM879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V And 3V Electronic Flash Use. Spec. No. : HM200203 Issued Date : 1996.07.01 Revised Date : 2002.02.26 Page No. : 1/3 Features SOT-89 • Charger-up time is about 1 mS faster than of a germanium transistor. • Small saturation voltage can bring less power dissipation and flashing times. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .. -55 ~ +150 °C Junction Temperature .
Manufacture Hi-Sincerity Mocroelectronics
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Part Number HM879
Description SILICON PNP EPITAXIAL TYPE TRANSISTOR
Feature Production specification SILICON PNP EPITAXIAL TYPE TRANSISTOR FEATURES  Charger-up time is about 1 mS faster Than of a germanium transistor. Pb Lead-free  Small saturation voltage can bring dissipation And flasing times. HM879 ORDERING INFORMATION Type No. Marking HM879 879 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 30 VCEX Collector-Emitter Voltage 20 VCEO Collector-Emitter Voltage 10 VEBO Emitter-Base Voltage 6 IC PC Tj,Tstg Collector Current –Continuous –Pluse Collector Dis.
Manufacture GME
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Part Number HM879
Description NPN Transistor
Feature JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors HM879 TRANSISTOR (NPN) FEATURES z High Current z Low Voltage z General Purpose Amplifier Applications SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MARKING:879 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 30 10 6 3 500 250 150 -55~+150 Unit V.
Manufacture JCST
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