Part Number | LET20030S |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Title | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
Description | The LET20030S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band co... |
Features |
ed, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
PIN CONNECTION
SOURCE
GATE
DRAIN
Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °... |
Published | Mar 22, 2005 |
Datasheet | LET20030S PDF File |