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MMBT5551LT1
TRANSISTOR
Description
RoHS MMBT5551LT1 NPN EPITAXIAL SILICON TRANSISTOR HIGH
VOLTAGE
TRANSISTOR Collector Dissipation:Pc-225mW(Ta=25o) .,LTDCollector-Emiller
Voltage
:VCEO=160V SOT-23 1 1. 2.4 1.3 3 2 1.BASE 2.EMITTER 3.COLLECTOR 2.9 1.9 0.95 0.95 0.4 O Unit:mm CABSOLUTE MAXIMUM RATINGS ICCharacteristic Collector-Base
Voltage
Collector-Emitter
Voltage
NEmitter-Base
Voltage
...
WEJ
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