MMBT7002
N-Channel Enhancement Mode Field Effect Transistor
Features High density cell design for low RDS(ON) Voltage controlled small signal switching
High saturation current capability High speed switching
Gate
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Drain-Source Voltage
Drain-Gate Voltage (RGS ≤ 1MΩ)
Gate-Source Voltage
-Continuous ...
