| Part Number | MRF1500 |
| Manufacturer | Motorola |
| Title | MICROWAVE POWER TRANSISTOR |
| Description | ( DataSheet : www..com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1500/D The RF Line Microwave Pulse Power ... |
| Features |
O IC PD Tstg TJ Value 65 65 3.5 35 1750 10 – 65 to +200 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.1 Unit °C/W NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operat... |
| File Size | 119.14KB |
| Datasheet |
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MRF15090 : ( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF15090/D The RF Line NPN Silicon RF Power Transistor Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz. • Specified 26 Volts, 1490 MHz, Class AB Characteristics Output Power — 90 Watts (PEP) Gain — 7.5 dB Min @ 90 Watts (PEP) Collector Efficiency — 30% Min @ 90 Watts (PEP) Intermodulation Distortion — –28 dBc Max @ 90 Watts (PEP) MRF15090 90 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON ARCHIVE INFORMATION • Characterized with Series Equivalent L.
MRF1507T1 : ( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1507/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment. • Specified Performance @ 520 MHz, 7.5 Volts Output Power — 8 Watts Power Gain — 10 dB Efficiency — 65% • Characterized with Series Equivalent Large–Signal D Impedance Parameters • Excellent Thermal Stability • Capable of Handlin.
MRF1507 : ( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1507/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment. • Specified Performance @ 520 MHz, 7.5 Volts Output Power — 8 Watts Power Gain — 10 dB Efficiency — 65% • Characterized with Series Equivalent Large–Signal D Impedance Parameters • Excellent Thermal Stability • Capable of Handlin.
MRF15060S : ( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF15060/D The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequencies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common–emitter class A and class AB amplifier applications in 26 volt amplitude modulated and multi–carrier base station equipment. • Guaranteed Two–Tone Performance at 1490 MHz, 26 Volts Output Power — 60 Watts (PEP) Power Gain — 10 dB Efficiency — 33% • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Para.
MRF15060 : ( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF15060/D The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequencies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common–emitter class A and class AB amplifier applications in 26 volt amplitude modulated and multi–carrier base station equipment. • Guaranteed Two–Tone Performance at 1490 MHz, 26 Volts Output Power — 60 Watts (PEP) Power Gain — 10 dB Efficiency — 33% • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Para.