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MRF6V12500H Transistors Datasheet PDF

RF Power LDMOS Transistors

RF Power LDMOS Transistors

 

 

 

Part Number MRF6V12500H
Description RF Power LDMOS Transistors
Feature Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel E nhancement--Mode Lateral MOSFETs These RF power transistors are designed for applications operating at frequencies b etween 960 and 1215 MHz such as distanc e measuring equipment (DME), transponde rs and secondary radars for air traffic control.
These devices are suitable fo r use in pulse applications, including Mode S ELM.
 Typical Pulse Performa nce: VDD = 50 Volts, IDQ = 200 mA Appl ication Signal Type Pout (1) (W) Fre q.
(MHz) Gps D (dB) (%) Narrowband Pulse 500 Peak Short Pulse (128  sec, 10% Duty Cycle) .
Manufacture NXP
Datasheet
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MRF6V12500H

 

 

 


 

 

 

Part Number MRF6V12500HSR3
Description RF Power Field Effect Transistors
Feature Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev.
0, 9/ 2009 www.
DataSheet4U.
com RF Power Fiel d Effect Transistors N - Channel Enhan cement - Mode Lateral MOSFETs RF Power transistors designed for applications o perating at frequencies between 965 and 1215 MHz.
These devices are suitable f or use in pulsed applications.

• Typi cal Pulsed Performance: VDD = 50 Volts, IDQ = 200 mA, Pout = 500 Watts Peak (5 0 W Avg.
), f = 1030 MHz, Pulse Width = 128 μsec, Duty Cycle = 10% Power Gain — 19.
7 dB Drain Efficiency — 62% Capable of Handling 10:1 VSWR, @ 50 V dc, 1030 MHz, 500 Watts .
Manufacture Freescale Semiconductor
Datasheet
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MRF6V12500HSR3

 

 

 


 

 

 

Part Number MRF6V12500HS
Description RF Power LDMOS Transistors
Feature Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel E nhancement--Mode Lateral MOSFETs These RF power transistors are designed for applications operating at frequencies b etween 960 and 1215 MHz such as distanc e measuring equipment (DME), transponde rs and secondary radars for air traffic control.
These devices are suitable fo r use in pulse applications, including Mode S ELM.
 Typical Pulse Performa nce: VDD = 50 Volts, IDQ = 200 mA Appl ication Signal Type Pout (1) (W) Fre q.
(MHz) Gps D (dB) (%) Narrowband Pulse 500 Peak Short Pulse (128  sec, 10% Duty Cycle) .
Manufacture NXP
Datasheet
Download MRF6V12500HS Datasheet

MRF6V12500HS

 

 

 

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