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MRF7S35120HSR3
RF Power Field Effect Transistor
Description
Freescale Semiconductor Technical Data Document Number: MRF7S35120HS www.DataSheet4U.com Rev. 1, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral
MOSFET
Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz. Typical Pulsed Performance: VDD = 32 Volts, IDQ = 150 mA, Pout = 120 Watts Pea...
Motorola
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MRF7S35120HSR3
RF Power Field Effect Transistor
- Motorola
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