Transistors. NTE2359 Datasheet

NTE2359 Datasheet PDF

Part NTE2359
Description Silicon Complementary Transistors
Feature NTE2359 (NPN) & NTE2360 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 47k Bias Resist.
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NTE2359 (NPN) & NTE2360 (PNP) Silicon Complementary Transist NTE2359 Datasheet




NTE2359
NTE2359 (NPN) & NTE2360 (PNP)
Silicon Complementary Transistors
Digital w/2 Built–In 47k Bias Resistors
Features:
D Built–In Bias Resistor (R1 = 47k, R2 = 47k)
D Small–Sized Package (TO92 type)
Applications:
D Switching Circuit
D Inverter
D Interface Circuit
D Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +160°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Band–width Product
NTE2359
ICBO
ICEO
IEBO
hFE
fT
VCB = 40V, IE = 0
VCE = 40V, IB = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 5mA
VCE = 10V, IC = 5mA
NTE2360
Output Capacitance
NTE2359
Cob VCB = 10V, f = 1MHz
NTE2360
Min Typ Max Unit
– – 0.1 µA
– – 0.5 µA
30 53 80 µA
50 –
– 250 – MHz
– 200 – MHz
– 3.7 – pF
– 5.5 – pF



NTE2359
Electrical Characteristics (Contd): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
CollectorEmitter Saturation Voltage
CollectorBase Breakdown Voltage
CollectorEmitter Breakdown Voltage
Input OFF Voltage
Input ON Voltage
Input Resistance
VCE(sat) IC = 5mA, IB = 0.25mA
V(BR)CBO IC = 10µA, IE = 0
V(BR)CEO IC = 100µA, RBE =
VI(off) VCE = 5V, IC = 100µA
VI(on) VCE = 200mV, IC = 5mA
R1
0.1 0.3 V
50 – – V
50 – – V
0.8 1.1 1.5 V
1.0 2.5 5.0 V
32 47 62 k
Input Resistance Ratio
R1/R2
0.9 1.0 1.1
Collector
(Output)
Schematic Diagram
Collector
(Output)
Base
(Input)
R1
R2
Base
(Input)
R1
R2
Emitter
(GND)
NPN
.165 (4.2)
Max
.126
(3.2)
Max
.071
(1.8)
.500
(12.7)
Max
Emitter
(GND)
PNP
ECB
.050 (1.27)
.050 (1.27)
.035 (0.9)
.102
(2.6)
Max




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