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NTE2356

Part Number	NTE2356
Manufacturer	NTE
Description	Silicon Complementary Transistors
Published	Aug 16, 2016
Detailed Description	NTE2355 (NPN) & NTE2356 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 10k Bias Resistors Features: D Bui...
Datasheet	NTE2356 PDF File

Overview

NTE2355 (NPN) & NTE2356 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 10k Bias Resistors Features: D Built–In Bias Resistor (R1 = 10kΩ, R2 = 10kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit D Driver Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector to Base Voltage, VCBO .
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50V Collector to Emitter Voltage, VCEO .
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50V Emitter to Base Voltage, VEBO .
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10V Collector Current, IC Continuous .
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100mA Peak .
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200mA Collector Dissipation, PC .
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300mW Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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–55° to +160°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Band–width Product NTE2355 ICBO ICEO IEBO hFE fT VCB = 40V, IE = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10mA VCE = 10V, IC = 5mA NTE2356 Output Capacitance NTE2355 Cob VCB = 10V, f = 1MHz NTE2356 Min Typ Max Unit – – 0.
1 µA – – 0.
5 µA 170 250 330 µA 50 – – – 250 – MHz – 200 – MHz – 3.
7 – pF – 5.
5 – pF E...

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