NX2301P
20 V, 2 A P-channel Trench MOSFET
Rev. 1 — 26 October 2010 Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
1.8 V RDSon rated for Low Voltage...
