Silicon N-Channel IGBT
Description
Preliminary Datasheet
RJH60F6DPK
Silicon N Channel IGBT High Speed Power Switching
Features
Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 95 ns typ. (at IC = 30 A, Resistive Load, VCC =...
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