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SGM2016AN

Part Number	SGM2016AN
Manufacturer	Sony Corporation
Title	GaAs N-channel Dual-Gate MES FET
Description	The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications i...
Features	• Ultra-small package • Low voltage operation • Low noise NF = 1.2dB (typ.) at 900MHz • High gain Ga = 21dB (typ.) at 900MHz • High stability • Built-in gate protection diode Application UHF-band high-frequency amplifier, mixer, and oscillator Structure GaAs, N-channel, dual-gate metal semiconductor...
Published	Apr 8, 2005
Datasheet	SGM2016AN PDF File

SGM2016AN

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