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SPP11N60C3
N-Channel MOSFET
Description
isc N-Channel
MOSFET
Transistor SPP11N60C3，ISPP11N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·...
INCHANGE
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