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SPP11N60C3

Infineon Technologies
Part Number SPP11N60C3
Manufacturer Infineon Technologies
Description Power Transistor
Published Feb 24, 2006
Detailed Description SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolutionary high voltage...
Datasheet PDF File SPP11N60C3 PDF File

SPP11N60C3
SPP11N60C3


Overview
SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • High peak current capability • Improved transconductance 23 1 P-TO220-3-31 • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) 650 V 0.
38 Ω 11 A PG-TO220 Type Package Ordering Code Marking SPP11N60C3 PG-TO220 Q67040-S4395 11N60C3 SPI11N60C3 PG-TO262 Q67042-S4403 11N60C3 SPA11N60C3 PG-TO220FP Q67040-S4408 SPA11N60C3E8185 PG-TO220 11N60C3 11N60C3 Maximum Ratings Parameter Symbol Value SPP_I SPA Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.
5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 7) ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt 11 111) 7 71) 33 33 340 340 0.
6 0.
6 11 11 ±20 ±20 ±30 ±30 125 33 -55.
.
.
+150 15 Unit A A mJ A V W °C V/ns Rev.
3.
3 Page 1 2018-02-09 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 3) Soldering temperature, wavesoldering 1.
6 mm (0.
063 in.
) from case for 10s 4) Symbol dv/dt Value 50 Unit V/ns Symbol RthJC RthJC_FP RthJA RthJA_FP RthJA Tsold Values Unit min.
typ.
max.
- - 1 K/W - - 3.
8 - - 62 - - 80 - - 62 - 35 - - - 260 °C Electrical...



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