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SAMWIN
General Description Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 500 V : 1.4 ohm : 5.0 A : 28 nc : 73 W
SW830
This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time...
