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SW830A

SAMWIN
Part Number SW830A
Manufacturer SAMWIN
Description N-channel MOSFET
Published Aug 18, 2013
Detailed Description SAMWIN SW830A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.5 Ω)@VGS=10V ■ Gate Charge (Typ 19nC) ■ Imp...
Datasheet PDF File SW830A PDF File

SW830A
SW830A

Overview
SAMWIN SW830A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.
5 Ω)@VGS=10V ■ Gate Charge (Typ 19nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 BVDSS : 500V ID : 5.
5A RDS(ON) : 1.
5ohm 1 2 1 3 2 3 2 1.
Gate 2.
Drain 3.
Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
1 3 Order Codes Item 1 2 Sales Type SW P 830A SW F 830A Marking SW830A SW830A Package TO-220 TO-220F Packaging TUBE TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC=25oC) (note 1) 5.
5 3.
8 22 ± 30 (note 2) (not...


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