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MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM1011-4L
TECHNICAL DATA FEATURES
HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS Output Power at 1dB Gain Compression Point Powe...
