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TTC017

Toshiba

NPN Transistor


Description
Bipolar Transistors Silicon NPN Epitaxial Type TTC017 1. Applications Power Amplifiers Power Switching 2. Features (1) High DC current gain : hFE = 180 to 450 (IC = 0.5 A) (2) Low collector saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1 A) (3) High-speed switching : tstg = 400 ns (typ.) (IC = 1 A) 3. Packaging and Internal Circuit TTC017 N...



Toshiba

TTC017

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