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UPD416 RAM Datasheet PDF16K x 1-Bit DYNAMIC NMOS RAM 16K x 1-Bit DYNAMIC NMOS RAM |
　
　
　
| Part Number | UPD416 |
|---|---|
| Description | 16K x 1-Bit DYNAMIC NMOS RAM |
| Feature | NEe Microcomputers, Inc. 18384 x 1 BIT D YNAMIC MOS RANDOM ACCESS MEMORY NEe f' PD416 P. PD416·1 f' PD416·2 f'PD416 ·3 J. L PD416·5 DESCPIIIPTION The NEC I1PD416 is a 16384 words by 1 bit Dynam ic MOS RAM. It is designed for memory a pplications where very low cost and lar ge bit storage are important design obj ectives. The I1PD416 . is fabr,icated us ing a double-poly-layer N channel silic on gate process which affords high -sto rage cell density and high performance. The use of dynamic circuitry throughou t, including the sense amplifiers, assu res minirnal power dissipation. II Mu ltiplexed address . |
| Manufacture | NEC |
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| Part Number | UPD4168 |
|---|---|
| Description | 8192 x 8 Bit NMOS XRAM |
| Feature | w
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a D . w S a t e e h U 4 t m o . c w w w . D t a S a e h t e U 4 . c m o w w w . D at h S a t e e 4U . m o c . |
| Manufacture | NEC |
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| Part Number | UPD4164-3 |
|---|---|
| Description | 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY |
| Feature | NEe Microcomputers, Inc. 65,536 x 1 BIT DYNAMIC RANDOM ACCESS MEMORY NEe Jo&PD 4164-1 ,. ,. PD4164-2 J. L PD4164-3 ~rn~[ m~~~illrnw DESCR IPTI ON The NEC /lPD 4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed to operate from a single +5V power supply. The neg ative-voltage substrate bias is interna lly generated - its operation is both a utomatic and transparent. The /lPD4164 utilizes a double-poly-layer N-channel silicon gate process which provides hi gh storage cell density, high performan ce and high reliability. The /lPD4164 uses a single transistor dynamic storag e cell and adv . |
| Manufacture | NEC |
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