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UPD416 RAM Datasheet PDF

16K x 1-Bit DYNAMIC NMOS RAM

16K x 1-Bit DYNAMIC NMOS RAM

 

 

 

Part Number UPD416
Description 16K x 1-Bit DYNAMIC NMOS RAM
Feature NEe Microcomputers, Inc.
18384 x 1 BIT D YNAMIC MOS RANDOM ACCESS MEMORY NEe f' PD416 P.
PD416·1 f' PD416·2 f'PD416 3 J.
L PD416·5 DESCPIIIPTION The NEC I1PD416 is a 16384 words by 1 bit Dynam ic MOS RAM.
It is designed for memory a pplications where very low cost and lar ge bit storage are important design obj ectives.
The I1PD416 .
is fabr,icated us ing a double-poly-layer N channel silic on gate process which affords high -sto rage cell density and high performance.
The use of dynamic circuitry throughou t, including the sense amplifiers, assu res minirnal power dissipation.
II Mu ltiplexed address .
Manufacture NEC
Datasheet
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UPD416

 

 

 


 

 

 

Part Number UPD4168
Description 8192 x 8 Bit NMOS XRAM
Feature w w a D .
w S a t e e h U 4 t m o .
c w w w .
D t a S a e h t e U 4 .
c m o w w w .
D at h S a t e e 4U .
m o c .
Manufacture NEC
Datasheet
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UPD4168

 

 

 


 

 

 

Part Number UPD4164-3
Description 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY
Feature NEe Microcomputers, Inc.
65,536 x 1 BIT DYNAMIC RANDOM ACCESS MEMORY NEe Jo&PD 4164-1 ,.
,.
PD4164-2 J.
L PD4164-3 ~rn~[ m~~~illrnw DESCR IPTI ON The NEC /lPD 4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed to operate from a single +5V power supply.
The neg ative-voltage substrate bias is interna lly generated - its operation is both a utomatic and transparent.
The /lPD4164 utilizes a double-poly-layer N-channel silicon gate process which provides hi gh storage cell density, high performan ce and high reliability.
The /lPD4164 uses a single transistor dynamic storag e cell and adv .
Manufacture NEC
Datasheet
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UPD4164-3

 

 

 

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