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Rectifier. VI20120SG Datasheet

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Rectifier. VI20120SG Datasheet







VI20120SG Datasheet PDF




VI20120SG Datasheet PDF


Part Number

VI20120SG

Description

High-Voltage Trench MOS Barrier Schottky Rectifier

Feature www.vishay.com V20120SG, VI20120SG Vish ay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier U ltra Low VF = 0.54 V at IF = 5 A TO-22 0AB TMBS ® TO-262AA K 3 2 1 V2012 0SG PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI20120SG PIN 1 PIN 2 PIN 3 K FEAT URES • Trench MOS Schottky technology • Low forward voltage drop, low powe r losses • High efficie.
Manufacture

Vishay

Datasheet
Download VI20120SG Datasheet

VI20120SG












Part Number

VI20120SG

Description

High-Voltage Trench MOS Barrier Schottky Rectifier

Feature www.vishay.com V20120SG, VI20120SG Vish ay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier U ltra Low VF = 0.54 V at IF = 5 A TO-22 0AB TMBS ® TO-262AA K 3 2 1 V2012 0SG PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI20120SG PIN 1 PIN 2 PIN 3 K FEAT URES • Trench MOS Schottky technology • Low forward voltage drop, low powe r losses • High efficie.
Manufacture

Vishay

Datasheet
Download VI20120SG Datasheet

VI20120SG









Part Number

VI20120SG-E3

Description

High Voltage Trench MOS Barrier Schottky Rectifier

Feature V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 www.vishay.com Vishay G eneral Semiconductor High Voltage Tren ch MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20120SG 3 2 1 P IN 1 PIN 2 PIN 3 CASE D2PAK (TO-263 AB) K VF20120SG 1 2 3 PIN 1 PIN 2 PIN 3 TO-262AA K A NC VB20120SG NC K A HEATSINK DESIGN S.
Manufacture

Vishay

Datasheet
Download VI20120SG-E3 Datasheet

VI20120SG-E3



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