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VI20120S

Vishay
Part Number VI20120S
Manufacturer Vishay
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Published Feb 2, 2012
Detailed Description www.vishay.com V20120S, VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra...
Datasheet PDF File VI20120S PDF File

VI20120S
VI20120S

Overview
www.
vishay.
com V20120S, VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
50 V at IF = 5 A TO-220AB TMBS ® TO-262AA K 3 2 1 V20120S PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI20120S PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max.
10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 20 A 120 V 200 A VF at IF = 20 A 0.
73 V TJ max.
Package 150 °C TO-220AB, TO-262AA Diode variation Single MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-complian...


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