FDG6301N-F085 Datasheet

FDG6301N-F085 Dual N-Channel Digital FET

Dual N-Channel, Digital FET FDG6301N-F085 Features • 25 V, 0.22 A Continuous, 0.65 A Peak • RDS(ON) = 4 Ω @ VGS = 4.5 V, • RDS(ON) = 5 Ω @ VGS = 2.7 V. • Very Low Level Gate Drive Requirements allowing Directop− Eration in 3 V Circuits (VGS(th) < 1.5 V) • Gate−Source Zener for ESD Ruggedness ( >6 .

Features

• 25 V, 0.22 A Continuous, 0.65 A Peak
• RDS(ON) = 4 Ω @ VGS = 4.5 V,
• RDS(ON) = 5 Ω @ VGS = 2.7 V.
• Very Low Level Gate Drive Requirements allowing Directop− Eration in 3 V Circuits (VGS(th) < 1.5 V)
• Gate−Source Zener for ESD Ruggedness ( >6 kV Human Body Model)
• Compact Industry Standard SC70−6 Surface Mount Package.
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications
• Low Voltage Applications as a Replacement for Bipolar Digital Transistors and Small Signal MOSFETs MOSFET MAXIMUM RATINGS (TA = 25°C unless other.