MOS FET. RQJ0301HGDQS Datasheet

RQJ0301HGDQS FET. Datasheet pdf. Equivalent

Part RQJ0301HGDQS
Description Silicon P-Channel MOS FET
Feature RQJ0301HGDQS Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 38 m Ω.
Manufacture Renesas
Datasheet
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RQJ0301HGDQS
RQJ0301HGDQS
Silicon P Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 38 m typ (VGS = –10 V, ID = –2.6 A)
Low drive current
High speed switching
4.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK R )
1
2
3
4
Note: Marking is “HG”.
REJ03G1265-0300
Rev.3.00
Jun 05, 2006
2, 4
D
1. Gate
1 G 2. Drain
3. Source
4. Drain
S
3
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID
Note1
(pulse)
Body - drain diode reverse drain current
Channel dissipation
Channel dissipation
IDR
Pch Note2
Pch
Note1
(pulse)
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 1 s, duty cycle 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Ratings
–30
+10 / –20
–5.2
–7.6
–5.2
1.5
5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Rev.3.00 Jun 05, 2006 page 1 of 6



RQJ0301HGDQS
RQJ0301HGDQS
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
V(BR)GSS
IGSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
Min
–30
+10
–20
–1.0
4.1
Typ
38
56
6.8
845
153
118
22
41
50
6.8
18
1.6
6.0
–0.8
Max
+10
–10
–1
–2.0
48
79
Unit
V
V
V
µA
µA
µA
V
m
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
(Ta = 25°C)
Test conditions
ID = –10 mA, VGS = 0
IG = +100 µA, VDS = 0
IG = –100 µA, VDS = 0
VGS = +8 V, VDS = 0
VGS = –16 V, VDS = 0
VDS = –30 V, VGS = 0
VDS = –10 V, ID = –1 mA
ID = –2.6 A, VGS = –10 VNote3
ID = –2.6 A, VGS = –4.5 VNote3
ID = –2.6 A, VDS = –10 VNote3
VDS = –10 V, VGS = 0,
f = 1 MHz
ID = –1 A, VGS = –10 V,
RL = 10 , Rg = 4.7
VDD = -10 V, VGS = -10 V,
ID = –5.2 A
IF = –1.5 A, VGS = 0Note3
Rev.3.00 Jun 05, 2006 page 2 of 6





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