NPN TRANSISTOR. KTD2058 Datasheet

KTD2058 TRANSISTOR. Datasheet pdf. Equivalent


Part KTD2058
Description TRIPLE DIFFUSED NPN TRANSISTOR
Feature SEMICONDUCTOR TECHNICAL DATA KTD2058 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. F.
Manufacture KEC
Datasheet
Download KTD2058 Datasheet


SEMICONDUCTOR TECHNICAL DATA KTD2058 TRIPLE DIFFUSED NPN TR KTD2058 Datasheet
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emi KTD2058 Datasheet
Elektronische Bauelemente KTD2058 3A, 60V P Plastic-Encapsu KTD2058 Datasheet
Recommendation Recommendation Datasheet KTD2058 Datasheet




KTD2058
SEMICONDUCTOR
TECHNICAL DATA
KTD2058
TRIPLE DIFFUSED NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES
Low Saturation Voltage
: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A.
Complementary to KTB1366.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
VCBO
VCEO
VEBO
IC
IB
Collector Power
Dissipation
Ta=25
Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
60
60
7
3
0.5
2
25
150
-55 150
UNIT
V
V
V
A
A
W
A
S
E
LL
M
DD
NN
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2
F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5
R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.5 +_ 0.2
R 2.6 +_0.2
HS
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
V(BR)CEO
hFE (Note)
VCE(sat)
VBE
fT
Cob
Turn-on Time
ton
Switching
Time
Storage Time
tstg
Fall Time
tf
Note : hFE Classification O:60 120, Y:100 200
TEST CONDITION
VCB=60V, IE=0
VEB=7V, IC=0
IC=50mA, IB=0
VCE=5V, IC=0.5A
IC=2A, IB=0.2A
VCE=5V, IC=0.5A
VCE=5V, IC=0.5A
VCB=10V, IE=0, f=1MHz
20µsec
IB1
INPUT
IB2
IB1
IB2
IB1=-I B2 =0.2A
DUTY CYCLE <= 1%
OUTPUT
15
VCC =30V
MIN.
-
-
60
60
-
-
-
-
TYP.
-
-
-
-
0.25
0.7
3.0
35
MAX. UNIT
1A
1A
-V
200
1.0 V
1.0 V
- MHz
- pF
- 0.65 -
- 1.3 -
S
- 0.65 -
2009. 7. 23
Revision No : 4
1/2



KTD2058
KTD2058
3.0
90
80
2.5 70
2.0
1.5
1.0
I C - VCE
60
50
40
30
20
IB =10mA
0.5 COMMON EMITTER
Tc=25 C
0
0
012345678
COLLECTOR-EMITTER VOLTAGE VCE (V)
h FE - IC
300
Tc=100 C
Tc=25 C
100 Tc=-25 C
50
30
10
0.02 0.05 0.1
COMMON EMITTER
VCE =5V
0.3 1
3 10
COLLECTOR CURRENT IC (A)
VCE(sat) - I C
1
COMMON EMITTER
IC /I B=10
0.5
0.3
0.1
0.05
0.03
0.02 0.05
Tc=100 C
Tc=25 C
Tc=-25 C
0.1 0.3 1
35
COLLECTOR CURRENT IC (A)
10
2009. 7. 23
Revision No : 4
Pc - Ta
40
35
30
1
25
20 2
3
15 4
10 5
6
57
8
1 Tc=Ta
INFINITE HEAT SINK
2 300x300x2mm Al
HEAT SINK
3 200x200x2mm Al
HEAT SINK
4 100x100x1mm Al
HEAT SINK
5 100x100x1mm Fe
HEAT SINK
6 50x50x1mm Al
HEAT SINK
7 50x50x1mm Fe
HEAT SINK
8 NO HEAT
SINK
0
0 25 50 75 100 125 150 175 200
AMBIENT TEMPERATURE Ta ( C)
SAFE OPERATING AREA
10
IC MAX(PULSED) *
5
3 IC MAX(CONTINUOUS)
1
DCTcO=P2E5RCATION
*
*
1s
*
*
0.5 * SINGLE NONREPETITIVE
PULSE Tc=25 C
0.3
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE
0.1
1
3 5 10
30 50 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
2/2







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)