Digital Transistors. DTC143TM Datasheet

DTC143TM Transistors. Datasheet pdf. Equivalent


Rohm DTC143TM
DTC143T series
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
Parameter
VCEO
IC
R1
 
Value
50V
100mA
4.7kΩ
 
lFeatures
1) Built-In Biasing Resistor
2) Built-in bias resistors enable the configuration of
 an inverter circuit without connecting external
 input resistors (see inner circuit) .
3) The bias resistors consist of thin-film resistors
 with complete isolation to allow negative biasing
 of the input. They also have the advantage of
 completely eliminating parasitic effects.
4) Only the on/off conditions need to be set
 for operation, making the circuit design easy.
5) Complementary PNP Types: DTA143T series
6) Complex transistors: EMH3/ UMH3N/ IMH3A/
 EMG3/ UMG3N/ FMG3A PNP type
7) Lead Free/RoHS Compliant.
lOutline
VMT3
 
DTC143TM
(SC-105AA)
EMT3
 
DTC143TE
SOT-416(SC-75A)
UMT3
 
DTC143TUA
SOT-323(SC-70)
lInner circuit
EMT3F
 
DTC143TEB
(SC-89)
UMT3F
 
DTC143TUB
(SC-85)
SMT3
 
DTC143TKA
SOT-346(SC-59)
lApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
B: BASE
C: COLLECTOR
E: EMITTER
lPackaging specifications
       
Part No.
Package
Package
size
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
DTC143TM
DTC143TEB
DTC143TE
DTC143TUB
DTC143TUA
DTC143TKA
VMT3 1212
T2L
180
8
8000
03
EMT3F 1616
TL
180
8
3000
03
EMT3 1616
TL
180
8
3000
03
UMT3F 2021
TL
180
8
3000
03
UMT3 2021 T106
180
8
3000
03
SMT3 2928 T146
180
8
3000
03
                                                                                        
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© 2012 ROHM Co., Ltd. All rights reserved.
1/9
20121023 - Rev.001


DTC143TM Datasheet
Recommendation DTC143TM Datasheet
Part DTC143TM
Description NPN 100mA 50V Digital Transistors
Feature DTC143TM; DTC143T series NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet Pa.
Manufacture Rohm
Datasheet
Download DTC143TM Datasheet




Rohm DTC143TM
DTC143T series
 
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DTC143TM
DTC143TEB
Power dissipation
DTC143TE
DTC143TUB
DTC143TUA
DTC143TKA
Junction temperature
Range of storage temperature
                Datasheet
Symbol
VCBO
VCEO
VEBO
IC
PD*1
Tj
Tstg
Values
50
50
5
100
150
150
150
200
200
200
150
-55 to +150
Unit
V
V
V
mA
mW
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BVCBO IC = 50μA
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
IE = 50μA
VCB = 50V
VEB = 4V
IC / IB = 5mA / 0.25mA
VCE = 5V, IC = 1mA
-
Transition frequency
f
*2
T
VCE = 10V, IE = -5mA,
f = 100MHz
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor
Values
Unit
Min. Typ. Max.
50 - - V
50 - - V
5- -V
- - 0.5 μA
- - 0.5 μA
- - 0.15 V
100 250 600 -
3.5 4.7 5.9 kΩ
- 250 - MHz
                                            
 
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© 2012 ROHM Co., Ltd. All rights reserved.
2/9
                                        
20121023 - Rev.001



Rohm DTC143TM
DTC143T series
 
lElectrical characteristic curves(Ta=25)
        
Datasheet
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics
Fig.3 DC Current gain vs. Collector Current
Fig.4 Collector-emitter saturation voltage vs.
Collector Current
                                                                                          
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
3/9
20121023 - Rev.001







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