Recovery Diode. DSF8025SG Datasheet

DSF8025SG Diode. Datasheet pdf. Equivalent


Dynex Semiconductor DSF8025SG
DSF8025SE / DSF8025SG
APPLICATIONS
I Induction Heating
I A.C. Motor Drives
I Inverters And Choppers
I Welding
I High Frequency Rectification
I UPS
DSF8025SE / DSF8025SG
Fast Recovery Diode
Advance Information
DS6153-1 July 2014 (LN31793)
KEY PARAMETERS
V
RRM
IF(AV)
IFSM
Q
r
trr
2500V
650A
7500A
540µC
5.0µs
FEATURES
I Double side cooling
I High surge capability
I Low recovery charge
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
Conditions
DSF8025SE25
DSF8025SG25
DSF8025SE24
DSF8025SG24
DSF8025SE23
DSF8025SG23
DSF8025SE22
DSF8025SG22
DSF8025SE21
DSF8025SG21
DSF8025SE20
DSF8025SG20
2500
2400
2300
2200
2100
2000
V = V + 100V
RSM
RRM
Lower voltage grades available.
Package outline type code: E Package outline type code: G
(See package details for further information)
Fig. 1 Package outlines
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DSF8025SE23 for 2300V product in an 'E' outline,
DSF8025SG23 for 2300V product in an 'G' outline,
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
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DSF8025SG Datasheet
Recommendation DSF8025SG Datasheet
Part DSF8025SG
Description Fast Recovery Diode
Feature DSF8025SG; DSF8025SE / DSF8025SG APPLICATIONS I Induction Heating I A.C. Motor Drives I Inverters And Choppers.
Manufacture Dynex Semiconductor
Datasheet
Download DSF8025SG Datasheet




Dynex Semiconductor DSF8025SG
DSF8025SE / DSF8025SG
CURRENT RATINGS
Symbol
Parameter
Double Side Cooled
IF(AV)
IF(RMS)
Mean forward current
RMS value
IF Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
IF(RMS)
IF
Mean forward current
RMS value
Continuous (direct) forward current
SURGE RATINGS
Symbol
Parameter
IFSM Surge (non-repetitive) forward current
I2t I2t for fusing
IFSM Surge (non-repetitive) forward current
I2t I2t for fusing
THERMAL AND MECHANICAL DATA
Symbol
Parameter
R
th(j-c)
Thermal resistance - junction to case
Rth(c-h) Thermal resistance - case to heatsink
Tvj Virtual junction temperature
T Storage temperature range
stg
- Clamping force
2/8
Conditions
Half wave resistive load, Tcase = 65oC
Tcase = 65oC
T = 65oC
case
Half wave resistive load, Tcase = 65oC
Tcase = 65oC
Tcase = 65oC
Max. Units
650
1020
785
A
A
A
385 A
604 A
465 A
Conditions
10ms half sine; with 0% VRRM, Tj = 150oC
10ms half sine; with 50% V T = 150oC
RRM, j
Max. Units
7.5 kA
281 x 103 A2s
6.0 kA
180 x 103 A2s
Conditions
Double side cooled
dc
Single side cooled
Anode dc
Cathode dc
Clamping force 8.0kN
with mounting compound
Double side
Single side
Forward (conducting)
Min. Max. Units
- 0.047 oC/W
- 0.094 oC/W
- 0.094 oC/W
- 0.018 oC/W
- 0.036 oC/W
- 150
-55 175
oC
oC
7.0 9.0 kN
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Dynex Semiconductor DSF8025SG
DSF8025SE / DSF8025SG
CHARACTERISTICS
Symbol
Parameter
V
FM
IRM
trr
QRA1
IRR
K
Forward voltage
Peak reverse current
Reverse recovery time
Recovered charge (50% chord)
Reverse recovery current
Soft factor
V
TO
Threshold voltage
rT Slope resistance
VFRP Peak forward recovery voltage
Conditions
At 1000A peak, T = 25oC
case
At V , T = 150oC
RRM case
I
F
=
1000A,
di /dt
RR
=
100A/µs
T = 150oC, V = 100V
case
R
At Tvj = 150oC
At Tvj = 150oC
di/dt = 1000A/µs, Tj = 125oC
DEFINITION OF K FACTOR AND QRA1
dIR/dt
0.5x IRR
IRR
t1
QRA1 = 0.5x IRR(t1 + t2)
t2 k = t1/t2
τ
Typ. Max. Units
- 2.3 V
- 50 mA
- 5.0 µs
- 540 µC
- 235 A
1.8 -
-
- 1.48 V
- 0.8 m
70 - V
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