Epitaxial Transistor. PZT2907A Datasheet

PZT2907A Transistor. Datasheet pdf. Equivalent

PZT2907A Datasheet
Recommendation PZT2907A Datasheet
Part PZT2907A
Description PNP Silicon Planar Epitaxial Transistor
Feature PZT2907A; PZT2907A PNP Silicon Planar Epitaxial Transistor P b Lead(Pb)-Free ABSOLUTE MAXIMUM RATINGS (Ta=25 .
Manufacture WEITRON
Datasheet
Download PZT2907A Datasheet




WEITRON PZT2907A
PZT2907A
PNP Silicon Planar Epitaxial Transistor
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Device Disspation TA=25 C
Junction Temperature
Storage, Temperature
BASE
1
Symbol
VCEO
VCBO
VEBO
IC(DC)
PD
Tj
Tstg
COLLECTOR
2, 4
3
EM ITTER
SOT-223
1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
1
2
3
4
Value
-60
-60
-5.0
-600
1.5
150
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
W
C
C
Device Marking
PZT2907A=2907A
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC=-10 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0)
Base-Emitter Cutoff Current (VCE= 60 Vdc, VBE=-3.0Vdc)
Collector-Emitter Cutoff Current (VCE= -30 Vdc, VBE=-0.5 Vdc)
Emitter-Base Cutoff Current (VEB= 3.0Vdc, IC =0)
Symbol Min Max Unit
V(BR)CEO
-60
-
Vdc
V(BR)CBO
-60
-
Vdc
V(BR)EBO
-5.0
-
Vdc
IBEX - 20 nAdc
ICEX - -50 nAdc
IEBO - 100 nAdc
NOTE: 1.Device mounted on an epoxy printed circuit board 1.575 inches 1.575 inches 0.059 inches; mounting pad for the
collector lead min. 0.93 inches.2
WEITRON
http://www.weitron.com.tw
1/4
Rev.A 26-Aug-05



WEITRON PZT2907A
PZT2907A
ELECTRICALCHARACTERISTICS-Continued (T A = 25 C unless otherwise noted)
C harac teris tic
S ymbol
Min TY P
Max Unit
ON CHARACTERISTICS
DC Current Gain
(I C = -100 mAdc, VCE = -10 Vdc)
(I C = -1.0 mAdc, VCE = -10 Vdc)
(I C = -10 mAdc, VCE = -10 Vdc)
(I C = -150 mAdc, VCE = -10 Vdc)
(I C = -500 mAdc, VCE = -10 Vdc)
Collector-Emitter Saturation Voltages
(I C = -150 mAdc, IB= -15 mAdc)
(I C = -500 mAdc, IB= -50 mAdc)
Base-Emitter Saturation Voltages
(I C = -150 mAdc, IB = -15 mAdc)
(I C = -500 mAdc, IB = -50 mAdc)
-
h FE1
75
-
-
h FE2
100
-
-
h FE3
100
-
-
h FE4
100
180
300
h FE5
50
-
-
V CE(sat)
-
-
Vdc
-0.2 -0.4
-0.5 -1.6
V BE( sat)
-
-
-
Vdc
-1.3
- -2.6
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(I C = -50 mAdc, VCE = -20 Vdc, f = 100 MHz)
Output Capacitance
(V CB = -10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(V EB = -2.0 Vdc, IC = 0, f = 1.0 MHz)
fT5 200
-
- MHz
Cc -
- 8.0 pF
Ce -
- 30 pF
SWITCHINGTIMES (TA = 25 C)
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
(V CC = -30 Vdc, IC = -150 mAdc,
I B1= -15 mAdc)
(V CC = -6.0 Vdc, IC= -150 mAdc,
IB1 = IB2 = -15 mAdc)
2. Pulse Test: Pulse Width<_ 300us, Duty Cycle<_ 2.0%
ton - - 45
td - - 10 ns
tr - - 40
toff - - 100
ts - - 80 ns
tf - - 30
WEITRON
http://www.weitron.com.tw
2/4
Rev.A 26-Aug-05



WEITRON PZT2907A
PZT2907A
WEITRON
http://www.weitron.com.tw
3/4
Rev.A 26-Aug-05







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