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1SS413CT

Schottky Barrier Diode

Description

Schottky Barrier Diode Silicon Epitaxial 1SS413CT 1. Applications High-Speed Switching 2. Features (1) Low forward voltage : VF(3) = 0.50 V (typ.) (2) Low reverse current : IR = 0.5 µA (max) (3) Small total capacitance : Ct = 3.9 pF (typ.) 3. Packaging and Internal Circuit 1SS413CT CST2 1: Cathode 2: Anode 4. Absolute Maximum Ratings (Note) (Unless oth...

Toshiba

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