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N-Channel MOSFET. SSF11NS60UF Datasheet

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N-Channel MOSFET. SSF11NS60UF Datasheet






SSF11NS60UF MOSFET. Datasheet pdf. Equivalent




SSF11NS60UF MOSFET. Datasheet pdf. Equivalent





Part

SSF11NS60UF

Description

N-Channel MOSFET



Feature


Main Product Characteristics: VDSS RDS( on) ID 600V 0.32Ω (typ.) 11A Feature s and Benefits: Feathers:  High dv/d t and avalanche capabilities  100% a valanche tested  Low input capacitan ce and gate charge  Low gate input r esistance TO-220F SSF11NS60UF Markin g and pin Assignment Schematic diagram Description: The SSF11NS60UF series M OSFETs is a new technology,.
Manufacture

SILIKRON

Datasheet
Download SSF11NS60UF Datasheet


SILIKRON SSF11NS60UF

SSF11NS60UF; which combines an innovative super junc tion technology and advance process. Th is new technology achieves low Rdson, e nergy saving, high reliability and unif ormity, superior power density and spac e saving. Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM P D @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Dr.


SILIKRON SSF11NS60UF

ain Current, VGS @ 10V① Pulsed Drain C urrent② Power Dissipation③ Linear D erating Factor Drain-Source Voltage Gat e-to-Source Voltage Single Pulse Avalan che Energy @ L=133mH Avalanche Current @ L=133mH Operating Junction and Storag e Temperature Range Max. 11 7 44 31 0. 25 600 ± 30 250 1.94 -55 to +150 Unit s A W W/°C V V mJ A °C ©Silikron Se miconductor CO.,LTD. 2013.0.


SILIKRON SSF11NS60UF

5.28 www.silikron.com Version : 1.0 pa ge 1 of 8 SSF11NS60UF Thermal Resista nce Symbol RθJC RθJA Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Typ. — — Max. 4. 0 80 Units ℃/W ℃/W Electrical Cha racterizes @TA=25℃ unless otherwise s pecified Symbol V(BR)DSS RDS(on) VGS(t h) IDSS IGSS Qg Qgs Qgd td(on) tr td(of f) tf Ciss Coss Crss Parameter Drai.

Part

SSF11NS60UF

Description

N-Channel MOSFET



Feature


Main Product Characteristics: VDSS RDS( on) ID 600V 0.32Ω (typ.) 11A Feature s and Benefits: Feathers:  High dv/d t and avalanche capabilities  100% a valanche tested  Low input capacitan ce and gate charge  Low gate input r esistance TO-220F SSF11NS60UF Markin g and pin Assignment Schematic diagram Description: The SSF11NS60UF series M OSFETs is a new technology,.
Manufacture

SILIKRON

Datasheet
Download SSF11NS60UF Datasheet




 SSF11NS60UF
Main Product Characteristics:
VDSS
RDS(on)
ID
600V
0.32Ω (typ.)
11A
Features and Benefits:
Feathers:
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
TO-220F
SSF11NS60UF
Marking and pin
Assignment
Schematic diagram
Description:
The SSF11NS60UF series MOSFETs is a new technology, which combines an innovative super
junction technology and advance process. This new technology achieves low Rdson, energy saving,
high reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=133mH
Avalanche Current @ L=133mH
Operating Junction and Storage Temperature Range
Max.
11
7
44
31
0.25
600
± 30
250
1.94
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.05.28
www.silikron.com
Version : 1.0
page 1 of 8




 SSF11NS60UF
SSF11NS60UF
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case
Junction-to-ambient (t ≤ 10s)
Typ.
Max.
4.0
80
Units
/W
/W
Electrical Characterizes @TA=25unless otherwise specified
Symbol
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
600
2
Typ.
0.32
0.72
2.1
22
4.3
8
11
6
29
6
804
34
3.4
Max.
0.36
4
1
50
100
-100
Units
V
Ω
V
μA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = 1mA
VGS=10V,ID = 3.2A
TJ = 125°C
VDS = VGS, ID = 0.32mA
TJ = 125°C
VDS =600V,VGS = 0V
TJ = 125°C
VGS =30V
VGS = -30V
ID= 6A,
VDS= 200V,
VGS = 10V
VGS=10V, VDS=400V,
RL=81.6Ω,RGEN=3.4Ω
ID=4.9A
VGS = 0V
VDS = 100V
ƒ = 600KHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
Typ.
Max.
11
— — 44
0.82 1.2
247
2.46
Units
A
A
V
ns
μC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=4.9A, VGS=0V
TJ = 25°C, IF =11A,
di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2013.05.28
www.silikron.com
Version : 1.0
page 2 of 8




 SSF11NS60UF
Test circuits and Waveforms
SSF11NS60UF
Switch Waveforms:
Notes:
Calculated continuous current based on maximum allowable junction temperature.
Repetitive rating; pulse width limited by max. junction temperature.
The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2013.05.28
www.silikron.com
Version : 1.0
page 3 of 8



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