DatasheetsPDF.com

IXTN30N100L Datasheet, Equivalent, Power MOSFET.

Power MOSFET

Power MOSFET

 

 

 

Part IXTN30N100L
Description Power MOSFET
Feature Power MOSFETs with IXTB 30N100L Extende d FBSOA IXTN 30N100L N-Channel Enhanc ement Mode Avalanche Rated VDSS = 1000 V ID25 = 30 A ≤RDS(on) 0.
45 Ω Symb ol VDSS VDGR V GS VGSM ID25 IDM IAR EAR EAS P D TJ TJM Tstg TL V ISOL Md FC We ight Test Conditions TJ = 25°C to 150 °C TJ = 25°C to 150°C; RGS = 1 MΩ C ontinuous Transient Maximum Ratings I XTB IXTN PLUS264 (IXTB) 1000 1000 V 1000 1000 V ± 30 ± 40 ± 30 ± 40 V V TC = 25°C TC = 25°C, Pulse width limited by T JM TC = 25°C TC = 2 5°C TC = 25°C T = 25°C C 30 30 70 7 0 30 30 80 80 2.
0 2.
0 800 800 -55 + 150 150 -55 +150 AG A D S .
Manufacture IXYS
Datasheet
Download IXTN30N100L Datasheet
Part IXTN30N100L
Description Power MOSFET
Feature Power MOSFETs with IXTB 30N100L Extende d FBSOA IXTN 30N100L N-Channel Enhanc ement Mode Avalanche Rated VDSS = 1000 V ID25 = 30 A ≤RDS(on) 0.
45 Ω Symb ol VDSS VDGR V GS VGSM ID25 IDM IAR EAR EAS P D TJ TJM Tstg TL V ISOL Md FC We ight Test Conditions TJ = 25°C to 150 °C TJ = 25°C to 150°C; RGS = 1 MΩ C ontinuous Transient Maximum Ratings I XTB IXTN PLUS264 (IXTB) 1000 1000 V 1000 1000 V ± 30 ± 40 ± 30 ± 40 V V TC = 25°C TC = 25°C, Pulse width limited by T JM TC = 25°C TC = 2 5°C TC = 25°C T = 25°C C 30 30 70 7 0 30 30 80 80 2.
0 2.
0 800 800 -55 + 150 150 -55 +150 AG A D S .
Manufacture IXYS
Datasheet
Download IXTN30N100L Datasheet

IXTN30N100L

IXTN30N100L
IXTN30N100L

IXTN30N100L

Recommended third-party IXTN30N100L Datasheet

 

 

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)