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2SK383 Datasheet, Equivalent, MOSFET Transistor.N-Channel MOSFET Transistor N-Channel MOSFET Transistor |
　
　
　
| Part | 2SK383 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | INCHANGE Semiconductor
isc N-Channel MOS FET Transistor
isc Product Specificati on
2SK383
DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Vol tage-
: VDSS= 100V(Min) ·Fast Switchin g Speed
APPLICATIONS ·High speed powe r Switching. ABSOLUTE MAXIMUM RATINGS( Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID PD Tj Tstg Drain-Source Vo ltage (VGS=0) 100 V Gate-Source Volta ge ±20 V Drain Current-continuous@ TC=25℃ 10 A Power Dissipation@TC=25â „ƒ 50 W Max. Operating Junction Tempe rature 150 ℃ Storage Temperature R ange -55~150 ℃ isc website：www. is csemi. cn 1 PDF pdfFactory Pro ww . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SK383 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | INCHANGE Semiconductor
isc N-Channel MOS FET Transistor
isc Product Specificati on
2SK383
DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Vol tage-
: VDSS= 100V(Min) ·Fast Switchin g Speed
APPLICATIONS ·High speed powe r Switching. ABSOLUTE MAXIMUM RATINGS( Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID PD Tj Tstg Drain-Source Vo ltage (VGS=0) 100 V Gate-Source Volta ge ±20 V Drain Current-continuous@ TC=25℃ 10 A Power Dissipation@TC=25â „ƒ 50 W Max. Operating Junction Tempe rature 150 ℃ Storage Temperature R ange -55~150 ℃ isc website：www. is csemi. cn 1 PDF pdfFactory Pro ww . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
　
　
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