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2SK399 Datasheet, Equivalent, MOSFET Transistor.N-Channel MOSFET Transistor N-Channel MOSFET Transistor |
　
　
　
| Part | 2SK399 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
DESCRIP TION ·Drain Current –ID=10A@ TC=25â„ ƒ ·Drain Source Voltage-
: VDSS=100V(M in) ·Fast Switching Speed ·100% avala nche tested ·Minimum Lot-to-Lot variat ions for robust device
performance and reliable operation
APPLICATIONS ·low on–resistance. ·High speed switching . ·Low drive current. ·No secondary b reakdown. ·Suitable for switchingregul ator, DC–DC control. ABSOLUTE MAXIMU M RATINGS(Ta=25℃) SYMBOL ARAMETER VA LUE UNIT VDSS Drain-Source Voltage (V GS=0) 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous @ TC=25℃ 10 A Ptot Total Dissip . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SK399 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
DESCRIP TION ·Drain Current –ID=10A@ TC=25â„ ƒ ·Drain Source Voltage-
: VDSS=100V(M in) ·Fast Switching Speed ·100% avala nche tested ·Minimum Lot-to-Lot variat ions for robust device
performance and reliable operation
APPLICATIONS ·low on–resistance. ·High speed switching . ·Low drive current. ·No secondary b reakdown. ·Suitable for switchingregul ator, DC–DC control. ABSOLUTE MAXIMU M RATINGS(Ta=25℃) SYMBOL ARAMETER VA LUE UNIT VDSS Drain-Source Voltage (V GS=0) 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous @ TC=25℃ 10 A Ptot Total Dissip . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
　
　
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