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TMU3N40ZG Datasheet, Equivalent, N-channel MOSFET.N-channel MOSFET N-channel MOSFET |
| Part | TMU3N40ZG |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance
D-PAK
Device TMD3N40ZG/TMU3N40ZG
Package D-PAK/I-PAK
TMD3N40ZG/TMU3N40ZG
VDSS = 440 V @Tjmax ID = 2A RDS(on) = 3. 4 W(max) @ VGS= 10 V I-PAK D G Marking TMD3N40ZG/TMU3N40ZG S Remark Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Not. |
| Manufacture | TRinno |
| Datasheet |
| Part | TMU3N40ZG |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance
D-PAK
Device TMD3N40ZG/TMU3N40ZG
Package D-PAK/I-PAK
TMD3N40ZG/TMU3N40ZG
VDSS = 440 V @Tjmax ID = 2A RDS(on) = 3. 4 W(max) @ VGS= 10 V I-PAK D G Marking TMD3N40ZG/TMU3N40ZG S Remark Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Not. |
| Manufacture | TRinno |
| Datasheet |
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