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2SA505
Silicon PNP Power Transistor
Description
isc Silicon
PNP
Power
Transistor
2SA505 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min.) ·Collector-Emitter Saturation Voltage- VCE(sat)= -0.8V (Max.)@ IC= -500mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATIN...
Inchange Semiconductor
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