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2SA652 Datasheet, Equivalent, Power Transistor.Silicon PNP Power Transistor Silicon PNP Power Transistor |
Part | 2SA652 |
---|---|
Description | Silicon PNP Power Transistor |
Feature | isc Silicon PNP Power Transistor
DESCRI PTION ·Collector-Emitter Breakdown Vol tage-
: V(BR)CEO= -100V(Min. ) ·Contunu ous Collector Current IC= -1A ·Power D issipationPC= 15W @TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation AP PLICATIONS ·Designed for low frequency power amplifier color TV vertical defl ection output applications. ABSOLUTE M AXIMUM RATINGS(Ta=25℃) SYMBOL PARAM ETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitt er Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current- Continuous -1. 0 A PC . |
Manufacture | Inchange Semiconductor |
Datasheet |
Part | 2SA652 |
---|---|
Description | Silicon PNP Power Transistor |
Feature | isc Silicon PNP Power Transistor
DESCRI PTION ·Collector-Emitter Breakdown Vol tage-
: V(BR)CEO= -100V(Min. ) ·Contunu ous Collector Current IC= -1A ·Power D issipationPC= 15W @TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation AP PLICATIONS ·Designed for low frequency power amplifier color TV vertical defl ection output applications. ABSOLUTE M AXIMUM RATINGS(Ta=25℃) SYMBOL PARAM ETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitt er Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current- Continuous -1. 0 A PC . |
Manufacture | Inchange Semiconductor |
Datasheet |
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