| DatasheetsPDF.com |
2SB526 Datasheet, Equivalent, Power Transistor.Silicon PNP Power Transistor Silicon PNP Power Transistor |
| Part | 2SB526 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Feature | isc Silicon PNP Power Transistor 2SB526 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Complement to Type 2SD356 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -90 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=2. |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SB526 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Feature | isc Silicon PNP Power Transistor 2SB526 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Complement to Type 2SD356 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -90 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=2. |
| Manufacture | Inchange Semiconductor |
| Datasheet |
|
|
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |