isc Silicon NPN RF Transistor
DESCRIPTION ·Low Noise and High Gain
NF = 1.2 dB TYP., Ga = 11 dB TYP. @VCE = 8 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 15dB TYP. @VCE = 8V, IC = 20 mA, f = 1.0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV
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