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2SD861

Part Number	2SD861
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Transistor
Published	Jun 24, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·High Power Di...
Datasheet	2SD861 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·High Power Dissipation- : PC= 45W@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.
5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.
0 A 45 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD861...

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