40P03GI AP40P03GI Datasheet

40P03GI Datasheet, PDF, Equivalent


Part Number

40P03GI

Description

AP40P03GI

Manufacture

Advanced Power Electronics

Total Page 5 Pages
Datasheet
Download 40P03GI Datasheet


40P03GI
Advanced Power
Electronics Corp.
AP40P03GI
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower On-resistance
D
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for all
commercial-industrial through hole applications.
BVDSS
RDS(ON)
ID
-30V
28mΩ
-30A
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Rating
-30
+20
-30
-18
-120
31.3
0.25
-55 to 150
-55 to 150
Value
4
65
Units
V
V
A
A
A
W
W/
Units
/W
/W
Data and specifications subject to change without notice
1
200812303

40P03GI
AP40P03GI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-18A
VGS=-4.5V, ID=-10A
Gate Threshold Voltage
VDS=VGS, ID=-250uA
Forward Transconductance
VDS=-10V, ID=-18A
Drain-Source Leakage Current
VDS=-30V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=-24V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS= +20V, VDS=0V
ID=-18A
Gate-Source Charge
VDS=-25V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=-4.5V
VDS=-15V
Rise Time
ID=-18A
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
Fall Time
RD=0.8Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=-25V
Reverse Transfer Capacitance
f=1.0MHz
Gate Resistance
f=1.0MHz
-30 - - V
- -0.02 - V/
- - 28 m
- - 50 m
-1 - -3 V
- 21 -
S
- - -1 uA
- - -250 uA
- - +100 nA
- 15 24 nC
- 3 - nC
- 10 - nC
- 10 - ns
- 48 - ns
- 31 - ns
- 66 - ns
- 910 1460 pF
- 300 - pF
- 210 - pF
- 11 17
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=-18A, VGS=0V
IS=-18A, VGS=0V,
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.3 V
- 30 - ns
- 25 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Features Advanced Power Electronics Corp. AP40P0 3GI RoHS-compliant Product P-CHANNEL EN HANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requ irement ▼ Fast Switching Characteris tic ▼ RoHS Compliant G S Descripti on Advanced Power MOSFETs from APEC pro vide the designer with the best combina tion of fast switching, ruggedized devi ce design, low on-resistance and cost-e ffectiveness. The TO-220CFM isolation package is widely preferred for all com mercial-industrial through hole applica tions. BVDSS RDS(ON) ID -30V 28mΩ -3 0A G D S TO-220CFM(I) Absolute Maxim um Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25 Drain-Source Voltage Gate-Source Vol tage Continuous Drain Current, VGS @ 10 V Continuous Drain Current, VGS @ 10V P ulsed Drain Current1 Total Power Dissip ation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Ju nction Temperature Range Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a .
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